Superconductivity in 3R-Ta1-xMxSe2 (M = W, Mo)

TL;DR

This study demonstrates that the 3R polytype of TaSe2-based materials exhibits significantly higher superconducting transition temperatures than the 2H polytype, and that doping-induced polytype transition enhances superconductivity.

Contribution

It reveals that a three-layer stacking sequence inherently favors higher Tc in TaSe2 systems, independent of Te/Se substitution effects.

Findings

3R polytype has Tc ~ 2 K, higher than 0.15 K of 2H polytype.

Mo or W doping induces a 2H to 3R polytype transition.

Polytype structure, not substitution, determines superconducting properties.

Abstract

The 3-layer (3R) polytype of TaSe2-xTex shows a superconducting transition temperature that is between 6 and 17 times higher than that of the two-layer (2H) polytype. The remarkable difference in Tc, although clearly associated with a difference in polytype, could have been due to an electronic effect specific to the Te-Se substitution. Here we report that small amounts of Mo or W doping lead to a 2H to 3R polytype transition in Ta1-xMoxSe2 and Ta1-xWxSe2. The 3R polytype materials are again found to have substantially higher Tcs (~ 2 K for Ta0.9W0.1Se2 and Ta0.9Mo0.1Se2) than the 2H material (0.15 K). This eliminates the possibility that any special characteristics of the Te/Se substitution are responsible for the dramatic difference in Tc, and instead shows that a three-layer stacking sequence is strongly preferred for superconductivity over a two-layer stacking sequence in the TaSe2 system.