Vector magnetometry based on S=3/2 electronic spins

TL;DR

This paper explores the use of S=3/2 electronic spins, such as silicon vacancy centers, for DC vector magnetometry, providing analytical solutions for field reconstruction and addressing ambiguities unique to high-spin systems.

Contribution

It extends the principles of vector magnetometry from S=1 to S=3/2 spins, offering analytical methods and practical insights for high-spin magnetic sensing.

Findings

Analytical solutions for magnetic field reconstruction in S=3/2 systems

Identification of ambiguities in field parameter determination

Proposed solutions using additional transitions in low-field regions

Abstract

Electronic spin systems with S>1/2 provide an efficient method for DC vector magnetometry, since the conventional electron spin resonance spectra at a given magnetic field reflect not only the field strength but also orientation in the presence of strong spin-spin interactions. S=1 spins, e.g. the nitrogen-vacancy centers in diamond, have been intensively investigated for such a purpose. In this report, we compare S=1 and S=3/2 spins, and discuss how one can apply general principles for the use of high spin systems as a vector magnetometer to the S=3/2 spin systems. We find analytical solutions which allow a reconstruction of the magnetic field strength and polar angle using the observed resonance transitions if an uniaxial symmetry exists for the spin-spin interaction as in S=1 systems. We also find that an ambiguity of determining the field parameters may arise due to the unique properties of S=3/2 systems, and present solutions for it utilizing additional transitions in the low-field region. The electronic spins of the silicon vacancy in silicon carbide will be introduced as a model for the S=3/2 DC vector magnetometer and the practical usage of it, including the magic-angle spinning type method, will be presented too.