High-performance chemical-bath deposited CdS thin-film transistors with ZrO2 gate dielectric

TL;DR

This paper reports the development of high-performance CdS thin-film transistors fabricated via chemical bath deposition, utilizing atomic layer deposited ZrO2 as a high-k gate dielectric to enhance device performance.

Contribution

Introduction of a novel combination of chemical bath deposited CdS TFTs with atomic layer deposited ZrO2 dielectric for improved performance.

Findings

High mobility and on/off ratio achieved

Effective gate control with ZrO2 dielectric

Potential for high-performance electronic applications

Abstract

We demonstrate high performance chemical bath deposited CdS thin-film transistors TFTs using atomic layer deposited ZrO2 based high-k gate dielectric material.