Broadband ultra-high transmission of terahertz radiation through monolayer MoS$_{2}$
Xue-Yong Deng, Xin-Hua Deng, Fu-Hai Su, Nian-Hua Liu, Jiang-Tao Liu

TL;DR
This study demonstrates that monolayer MoS$_{2}$ exhibits ultra-high transmission of terahertz radiation with minimal absorption, making it an excellent candidate for THz transparent electrodes, outperforming traditional materials like GaAs and InAs.
Contribution
The paper provides the first detailed analysis of THz transmission in monolayer MoS$_{2}$, showing its superior transmission properties and potential as a THz transparent electrode.
Findings
Monolayer MoS$_{2}$ has very low THz absorption even at high carrier concentrations.
Its transmission exceeds that of GaAs and InAs two-dimensional electron gases.
The maximum THz absorption of monolayer MoS$_{2}$ is limited to about 5%.
Abstract
In this study, terahertz (THz) absorption and transmission of monolayer MoS was calculated under different carrier concentrations. Results showed that the THz absorption of monolayer MoS is very small even under high carrier concentrations and large incident angle. Equivalent loss of the THz absorption is the total sum of reflection and absorption that is one to three grades lower than that of graphene. The monolayer MoS transmission is much larger than that of the traditional GaAs and InAs two-dimensional electron gas. The field-effect tubular structure formed by the monolayer MoS-insulation-layer-graphene is investigated. In this structure the THz absorption of graphene to reach saturation under low voltage. Meantime, the maximum THz absorption of monolayer MoS was limited to approximately 5\%. Thus, monolayer MoS is a kind of ideal THz Transparent…
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