Tuning of Zero Energy States in Quantum Dots of Silicene and Bilayer Graphene by Electric Field

TL;DR

This paper investigates how electric fields can tune zero energy states in silicene and bilayer graphene quantum dots, revealing geometry-dependent electronic properties for potential device applications.

Contribution

It demonstrates the tunability of edge-localized zero energy states in silicene and bilayer graphene quantum dots via electric fields, highlighting geometry's role in electronic property control.

Findings

Zero energy states are easily tunable by electric field.

Electronic gap evolution is highly sensitive to quantum dot geometry.

Potential for designing field-effect scalable quantum dot devices.

Abstract

Electronic properties of triangular and hexagonal nano-scale quantum dots (QDs) of Silicene and bilayer graphene are studied. It is shown that the low-energy edge-localized electronic states, existing within the size-quantized gap are easily tunable by electric field. The appearance and field evolution of the electronic gap in these zero energy states (ZES) is shown to be very sensitive to QD geometry that permits to design the field-effect scalable QD devices with electronic properties on-demand.