Quantum simulation of ZnO nanowire piezotronics

TL;DR

This paper models quantum transport in a ZnO nanowire under strain, revealing how piezopotential at interfaces modulates current thresholds, advancing understanding in quantum piezotronics.

Contribution

It introduces a quantum scattering approach to analyze piezopotential effects at interfaces, differing from traditional models that treat piezopotential as a bulk effect.

Findings

Piezopotential modulates voltage threshold for current flow.

Quantum scattering theory effectively models interface effects.

Potential for designing quantum piezotronic devices.

Abstract

We address the problem of quantum transport in a nanometre sized two-terminal ZnO device subject to an external strain. The two junctions formed between the electrodes and the ZnO are generally taken as Ohmic and Schottky type, respectively. Unlike the conventional treatment to the piezopotential, we treat it as a potential barrier which is only induced at the interfaces. By calculating the transmission coefficient of a Fermi-energized electron that flows from one end to the other, it is found that the piezopotential has the effect of modulating the voltage threshold of the current flowing. The calculations are based on the quantum scattering theory. The work is believed to pave the way for investigating the quantum piezotronics.