Precise determination of two-carrier transport properties in the topological insulator TlBiSe$_2$

TL;DR

This study precisely characterizes two-carrier transport in the topological insulator TlBiSe$_2$, revealing multicarrier conduction and phonon-dominated scattering, using a novel analysis method aligned with photoemission data.

Contribution

The paper introduces a new analysis procedure for accurately determining two-carrier transport properties in TlBiSe$_2$, advancing understanding of its bulk electron conduction mechanisms.

Findings

Multicarrier conduction of high- and low-mobility electrons confirmed.

Hall mobility temperature dependence explained by Bloch-Gr{"u}neisen formula.

Bulk electron scattering dominated by acoustic phonons.

Abstract

We report the electric transport study of the three-dimensional topological insulator TlBiSe$_2$. We applied a newly developed analysis procedure and precisely determined two-carrier transport properties. Magnetotransport properties revealed a multicarrier conduction of high- and low-mobility electrons in the bulk, which was in qualitative agreement with angle-resolved photoemission results~[K. Kuroda $et~al.$, Phys. Rev. Lett. $\bm{105}$, 146801 (2010)]. The temperature dependence of the Hall mobility was explained well with the conventional Bloch-Gr{\"u}neisen formula and yielded the Debye temperature $\varTheta_{\rm{D}}=113 \pm 14$~K. The results indicate that the scattering of bulk electrons is dominated by acoustic phonons.