Edge State Transport in Floquet Topological Insulators
Aaron Farrell, T. Pereg-Barnea

TL;DR
This paper investigates the transport properties of edge states in Floquet topological insulators, revealing that their two-terminal conductivity differs from the equilibrium value but can be restored by a Floquet sum rule, demonstrating robustness to disorder.
Contribution
It provides a detailed analysis of edge state transport in Floquet topological insulators and confirms the Floquet sum rule using numerical and analytical methods.
Findings
Edge states exhibit a two-terminal conductivity different from 2e^2/h.
Conductivity can be smaller than 2e^2/h and remains robust against disorder.
The Floquet sum rule recovers the equilibrium conductivity value.
Abstract
Floquet topological insulators are systems in which the topology emerges out of equilibrium when a time periodic perturbation is applied. In these systems one can define quasi-energy states which replace the quilibrium stationary states. The system exhibits its non-trivial topology by developing edge localized quasi-energy states which lie in a gap of the quasi energy spectrum. These states represent a non-equilibrium analogue of the topologically protected edge-states in equilibrium topological insulators. In equilibrium these edge-states lead to very specific transport properties, in particular the two-terminal conductivity of these systems is . Here we explore the transport properties of the edge-states in a Floquet topological insulator. In stark contrast to the equilibrium result, we find that the two terminal conductivity of these edge states is significantly different…
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