Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires

TL;DR

This study investigates how strain affects band alignment in InAs nanowires with mixed wurtzite and zincblende phases using resonance Raman spectroscopy and electronic structure calculations.

Contribution

It provides new insights into strain-induced band alignment in heterostructured nanowires through combined experimental and theoretical analysis.

Findings

Strain influences band alignment at the heterostructure interface.

Resonance Raman measurements reveal shifts in phonon modes related to strain.

Electronic structure calculations support experimental observations.

Abstract

We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin zone (E$_{1}$ gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite-zincblende interface. Our experimental results are further supported by electronic structure calculations for such periodic heterostructured interface.