Optical performance monitoring at 640Gb/s via slow-light in a silicon nanowire
B. Corcoran, C. Monat, M. Pelusi, C. Grillet, T. P. White, L. O, Faolain, T. F. Krauss, B. J. Eggleton, David J. Moss

TL;DR
This paper demonstrates a silicon nanowire device utilizing slow-light enhanced third harmonic generation for optical performance monitoring at up to 640Gb/s, achieving a record processing speed increase and potential for terabit-scale telecommunications.
Contribution
It introduces a compact silicon photonic crystal waveguide that leverages slow-light effects for high-speed optical performance monitoring, surpassing previous speed records.
Findings
Achieved optical performance monitoring at 640Gb/s using slow-light in silicon nanowire.
No degradation in enhancement at 640Gb/s compared to 40Gb/s.
Device has potential to operate above 1Tb/s.
Abstract
We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 micron) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640 Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems.
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Taxonomy
TopicsPhotonic and Optical Devices · Photonic Crystals and Applications · Plasmonic and Surface Plasmon Research
