Universal gate-set for trapped-ion qubits using a narrow linewidth diode laser
Nitzan Akerman, Nir Navon, Shlomi Kotler, Yinnon Glickman, Roee, Ozeri

TL;DR
This paper demonstrates a high-fidelity universal gate-set for trapped-ion qubits using a narrow linewidth diode laser, enabling precise quantum operations with improved stability and spectral filtering.
Contribution
It introduces a novel implementation of quantum gates on optical qubits with a stabilized diode laser and master-slave configuration, enhancing fidelity and control.
Findings
High fidelity single qubit gates achieved
Two-qubit Mølmer-Sørensen entangling gate demonstrated
Laser spectrum characterized with modified Ramsey sequence
Abstract
We report on the implementation of a high fidelity universal gate-set on optical qubits based on trapped Sr ions for the purpose of quantum information processing. All coherent operations were performed using a narrow linewidth diode laser. We employed a master-slave configuration for the laser, where an ultra low expansion glass (ULE) Fabry-Perot cavity is used as a stable reference as well as a spectral filter. We characterized the laser spectrum using the ions with a modified Ramsey sequence which eliminated the affect of the magnetic field noise. We demonstrated high fidelity single qubit gates with individual addressing, based on inhomogeneous micromotion, on a two-ion chain as well as the M{\o}lmer-S{\o}rensen two-qubit entangling gate.
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