Crystal growth and detector performance of large size high-purity Ge crystals
Guojian Wang, Mark Amman, Hao Mei, Dongming Mei, Klaus Irmscher,, Yutong Guan, Gang Yang

TL;DR
This paper reports on the growth of large high-purity germanium crystals using the Czochralski method, analyzing their impurity distribution and dislocation density, and evaluates a detector's spectral performance showing excellent energy resolution.
Contribution
It introduces a successful method for growing large high-purity Ge crystals with low dislocation density and demonstrates their effectiveness as radiation detectors.
Findings
Dislocation density meets detector requirements
Impurity distributions are characterized
Detector achieves excellent energy resolution
Abstract
High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000 - 4200 cm-2, which meets a requirement for use as a radiation detector. The axial and radial distributions of impurities in the crystals were measured and are discussed. A planar detector was also fabricated from one of the crystals and then evaluated for electrical and spectral performance. Measurements of gamma-ray spectra from Cs-137 and Am-241 sources demonstrate that the detector has excellent energy resolution.
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Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · Nuclear Physics and Applications · Silicon and Solar Cell Technologies
