Metallic State of Low Mobility Silicon at High Carrier density induced by an Ionic Liquid

TL;DR

This study investigates the metallic behavior in low mobility silicon induced by ionic liquid gating, revealing transitions at higher carrier densities and a mobility peak at elevated densities, challenging conventional understanding.

Contribution

It demonstrates that ionic liquid gating can induce metallic states in low mobility silicon at higher carrier densities than previously observed.

Findings

Metallic state observed at higher densities in low mobility silicon.

Mobility peak occurs beyond 10^{13} cm^{-2} carrier density.

Transition to metallic behavior at elevated carrier densities.

Abstract

High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low mobility samples at much higher areal carrier densities than found for samples of high mobility. We have also observed a mobility peak in metallic samples as the carrier density was increased beyond $10^{13} \text{cm}^{-2}$.