Phosphorene FETs: Promising transistors based on a few layers of phosphorus atoms

TL;DR

This review highlights rapid advancements in phosphorene FETs, showcasing their evolution into high-frequency, stable, and scalable transistors suitable for flexible and ultra-thin electronics.

Contribution

It summarizes recent progress in phosphorene FETs, emphasizing technological improvements and potential applications within a year of development.

Findings

Transition from back-gated to top-gated FETs

Gate length reduction to sub-micron scale

Cutoff frequencies above 10 GHz

Abstract

This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduced to the sub-micron range, passivation by high-k dielectrics or hexagonal boron nitride was demonstrated with temporal, thermal and mechanical stability, ohmic contact was achieved down to cryogenic temperatures, and cutoff frequencies was pushed above 10 GHz. These and other attractive characteristics of phosphorene promise the phosphorene FET to be a viable candidate for current-generation flexible electronics as well as future-generation ultra-thin-body low-power-consumption high-speed and high-frequency transistors.