Electronic Structure of Oxide Interfaces: A Comparative Analysis of GdTiO$_3$/SrTiO$_3$ and LaAlO$_3$/SrTiO$_3$ Interfaces
Hrishit Banerjee, Sumilan Banerjee, Mohit Randeria, Tanusri, Saha-Dasgupta

TL;DR
This study compares the electronic structures of GdTiO3/SrTiO3 and LaAlO3/SrTiO3 oxide interfaces using ab-initio calculations, revealing distinct behaviors in carrier density and surface charge effects, with implications for understanding 2DEG phenomena.
Contribution
It provides a comparative ab-initio analysis of GdTiO3/SrTiO3 and LaAlO3/SrTiO3 interfaces, highlighting differences in carrier density and surface charge behavior.
Findings
GTO/STO has a carrier density of 0.5 e^-/Ti, independent of GTO thickness.
LAO/STO shows carrier density buildup only beyond a threshold thickness.
Top GTO layer is insulating due to correlation effects, unlike LAO.
Abstract
Emergent phases in the two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides have attracted great attention in the past decade. We present ab-initio electronic structure calculations for the interface between a Mott insulator GdTiO (GTO) and a band insulator SrTiO (STO) and compare our results with those for the widely studied LaAlO/SrTiO (LAO/STO) interface between two band insulators. Our GTO/STO results are in excellent agreement with experiments, but qualitatively different from LAO/STO. We find an interface carrier density of 0.5/Ti, independent of GTO thickness in both superlattice and thin film geometries, in contrast to LAO/STO. The superlattice geometry in LAO/STO offers qualitatively the same result as in GTO/STO. On the other hand, for a thin film geometry, the interface carrier density builds up only beyond a…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
