Anisotropic magneto-capacitance in ferromagnetic-plate capacitors

TL;DR

This paper reports the discovery of anisotropic magneto-capacitance in ferromagnetic semiconductor capacitors, caused by spin-orbit interaction affecting the density of states based on magnetization direction.

Contribution

It introduces the first measurement of magnetization direction dependent capacitance in ferromagnetic semiconductor capacitors due to spin-orbit coupling.

Findings

Capacitance varies with magnetization orientation.

Anisotropic magneto-capacitance linked to spin-orbit interaction.

Demonstrates control of capacitance via magnetic anisotropy.

Abstract

The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction.