Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

TL;DR

This study investigates how proton implantation and lithium doping affect the magneto-transport properties of ZnO microwires, revealing temperature-dependent negative magneto-resistance behaviors linked to defect formation and heterostructure development.

Contribution

It provides new insights into the effects of proton implantation and lithium doping on the magneto-transport properties of ZnO microwires, highlighting the role of defects and heterostructure formation.

Findings

Li-doped ZnO microwires show non-monotonous negative magneto-resistance above 150 K.

Proton implantation creates stable Zn vacancies affecting transport properties.

Resistance behavior suggests formation of magnetic/non-magnetic heterostructures.

Abstract

The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non magnetic heterostructure in the wire after proton implantation.