Regular Rather than Chaotic Origin of the Resonant Transport in Superlattices
S. M. Soskin (1, 2), I. A. Khovanov (3), and P. V. E. McClintock, (2) ((1) Institute of Semiconductor Physics, Kiev, Ukraine, (2) Lancaster, University, Lancaster, UK, (3) University of Warwick, Coventry, UK)

TL;DR
This paper reveals that resonant electron transport in semiconductor superlattices is driven by regular dynamics rather than chaos, providing a new understanding and control methods for this phenomenon.
Contribution
It uncovers the true regular dynamical mechanism behind resonant transport, challenging the previous chaos-based explanations and offering a more accurate theoretical framework.
Findings
Electron dynamics are regular at relevant time-scales.
The theory matches previous numerical simulations.
New features and control methods for resonant transport are predicted.
Abstract
We address the enhancement of electron drift in semiconductor superlattices of nanometre scale that occurs in combined electric and tilted magnetic fields if Bloch oscillations become resonant with cyclotron rotation in the transverse plane. We uncover the true dynamical mechanism of the phenomenon: the electron dynamics at relevant time-scales is regular or almost regular, contrary to the widespread belief that the enhancement arises through chaotic diffusion between collisions. The theory provides an accurate description of earlier numerical simulations, predicts new remarkable features verified by simulations, and suggests new ways of controlling resonant transport.
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