Photonic MOS Based on "Optical Property Inversion"

TL;DR

This paper introduces a novel photonic MOS device leveraging optical property inversion in plasmonic materials, potentially advancing nanophotonic device development by exploiting dielectric constant transitions near plasma frequencies.

Contribution

It presents the concept of optical property inversion for photonic MOS, offering a new approach to tunable nanophotonic devices based on plasmonic materials.

Findings

Demonstrated tunability of optical properties near plasma frequency

Proposed a new device concept for nanophotonics

Reviewed recent electro-optical modulation work

Abstract

Most dielectric materials have very weak electro-optic properties, whereas the optical properties of some plasmonic materials may be greatly tuned, especially around their plasma frequency, where dielectric constant is transiting between positive ("dielectric state") and negative ("metallic state") values. In this report, we will review some of our recent work on electro-optical modulation and introduce a new concept, photonic MOS based on "optical property inversion". This concept may provide inspiration for the development of nanophotonic devices. Some of the material was adapted from unfunded NSF proposals.