Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities

TL;DR

This paper analyzes electron transport in high-mobility Si (100) MOSFETs at low concentrations, showing electrons behave as a noninteracting gas with renormalized parameters, enabling testable predictions.

Contribution

It introduces a model describing electrons as a noninteracting gas with renormalized mass and Lande factor in high-mobility Si (100) MOSFETs.

Findings

Electrons can be modeled as a noninteracting gas with renormalized parameters.

The model provides experimentally verifiable predictions.

Analysis focuses on low concentrations and high mobilities.

Abstract

A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a noninteracting gas with the renormalized mass and Lande factor, which allows experimentally verifiable predictions.