Transferable tight binding model for strained group IV and III-V heterostructures

TL;DR

This paper develops transferable empirical tight binding parameters for strained group IV and III-V semiconductors, derived from ab-initio calculations, enabling accurate modeling of strained bulk and superlattice structures.

Contribution

It introduces a new set of transferable tight binding parameters for strained semiconductors based on ab-initio data, improving modeling versatility.

Findings

Parameters show good transferability to strained bulk materials

Parameters accurately model ultra-thin superlattices

Enhances predictive capabilities for strained heterostructures

Abstract

In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding parameters show good transferability when applied to strained bulk materials as well as ultra-thin superlattices.