Correlations of mutual positions of charge density waves nodes in side-by-side placed InAs wires measured with scanning gate microscopy

TL;DR

This study uses scanning gate microscopy to analyze how charge density wave nodes in adjacent InAs nanowires correlate, revealing Coulomb interactions' crucial role in their formation.

Contribution

It provides the first direct experimental evidence of mutual correlation and lattice mismatch effects of charge density waves in side-by-side InAs nanowires.

Findings

Mutual correlation of charge density wave nodes observed

Shift in node positions and lattice mismatch detected

Coulomb interaction shown to influence charge density wave formation

Abstract

We investigate the correlations of mutual positions of charge density waves nodes in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and "crystal lattice mismatch" defect were observed. These observations demonstrate the crucial role of Coulomb interaction in formation of charge density waves in InAs nanowires.