Signatures of evanescent transport in ballistic suspended graphene superconductor junctions
Piranavan Kumaravadivel, Xu Du

TL;DR
This study demonstrates evanescent transport in ballistic suspended graphene Josephson junctions near the Dirac point, confirming theoretical predictions of pseudo-diffusive behavior in ultra-clean graphene devices.
Contribution
First experimental observation of evanescent transport in ballistic suspended graphene Josephson junctions near the Dirac point, validating longstanding theoretical models.
Findings
Transition from ballistic to evanescent transport below 10^10 cm^-2 carrier density
Pronounced sub-harmonic gap structures near the Dirac point
Sharp decrease in normalized excess current at low carrier densities
Abstract
In Dirac materials, the low energy excitations behave like ultra-relativistic massless particles with linear energy dispersion. A particularly intriguing phenomenon arises with the intrinsic charge transport behavior at the Dirac point where the charge density approaches zero. In graphene, a 2-D Dirac fermion system, it was predicted that charge transport near the Dirac point is carried by evanescent modes, resulting in unconventional pseudo-diffusive charge transport even in the absence of disorder. In the past decade, experimental observation of this phenomenon remained challenging due to the presence of strong disorder in graphene devices which limits the accessibility of the low carrier density regime close enough to the Dirac point. Here we report transport measurements on ballistic suspended graphene-Niobium Josephson weak links that demonstrate a transition from ballistic to…
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