The question of intrinsic origin of the metal-insulator transition in i-AlPdRe quasicrystal

TL;DR

This paper investigates whether the high resistivity in i-AlPdRe quasicrystals is due to intrinsic properties of the phase or extrinsic factors, providing evidence for an intrinsic origin based on comprehensive analysis.

Contribution

The study presents comprehensive experimental and literature data supporting the intrinsic origin of high resistivity in i-AlPdRe quasicrystals, challenging previous extrinsic explanations.

Findings

High resistivity correlates with structural and chemical quality.

Differences in resistivity between single grains and polycrystals are due to composition and treatment.

Evidence supports intrinsic origin of electrical properties in i-AlPdRe.

Abstract

The icosahedral (i-) AlPdRe is the most resistive quasicrystalline alloy discovered so far. Resistivities ($\rho$) of $1\Omega cm$ at 4K and correlated resistance ratios ($RRR = \rho_{4K}/\rho_{300K}$) of more than 200 are observed in polycrystalline samples. These values are two orders of magnitude larger than for the isomorphous i-AlPdMn phase. We discuss here the controversial microscopic origin of the i-AlPdRe alloy electrical specificity. It has been proposed that the high resistivity values are due to extrinsic parameters, such as secondary phases or oxygen contamination. From comprehensive measurements and data from the literature including electronic transport correlated with micro structural and micro chemical analysis, we show that on the contrary there is mounting evidence in support of an origin intrinsic to the i-phase. Similarly to the other quasicrystalline alloys, the electrical resistivity of the i-AlPdRe samples depends critically on minute changes in the structural quality and chemical composition. The low resistivity in i-AlPdRe single-grains compared to polycrystaline samples can be explained by difference in chemical composition, heterogeneity and thermal treatment.