Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation
Sharmila N. Shirodkar, Umesh V. Waghmare, Timothy S. Fisher, Ricardo, Grau-Crespo

TL;DR
This study uses first-principles calculations to explore how compositional and configurational modifications in 2D boron nitride alloys with carbon can tune their electronic bandgaps and band edge positions for potential photocatalytic applications.
Contribution
It provides a detailed analysis of how alloy composition and C atom configuration affect the electronic properties of 2D BN-C alloys, including bandgap tuning and band edge positioning.
Findings
Bandgap can be reduced to about 2 eV with moderate C substitution.
Maximum bandgap reduction occurs when C atoms are isolated.
C atom aggregation influences the bandgap through hybridization effects.
Abstract
Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of CBN alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C ; and (b) the electronic structure of CBN can be further tuned not only with composition , but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a…
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Taxonomy
TopicsChemical and Physical Properties of Materials · Graphene research and applications · Copper-based nanomaterials and applications
