Electronic Transitions in Strained SmNiO_3 Thin Films
S. Catalano, M. Gibert, V. Bisogni, O. Peil, F. He, R. Sutarto, M., Viret, P. Zubko, R. Scherwitzl, A. Georges, G. A. Sawatzky, T. Schmitt, J.-M., Triscone

TL;DR
This study explores how epitaxial strain influences the electronic and magnetic phase transitions in SmNiO_3 thin films, revealing strain-induced suppression and modification of the metal-insulator and magnetic transitions.
Contribution
It demonstrates the impact of epitaxial strain on the phase behavior of SmNiO_3, showing how strain can tune the transition temperatures and phases.
Findings
Compressive strain alters the relation between T_Néel and T_MI.
Small compressive strain leads to T_Néel=T_MI and first-order MIT.
High compressive strain stabilizes a metallic paramagnetic phase.
Abstract
Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T=T_N\'eel. Here, we investigate thin films of SmNiO_3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (T_N\'eel<T_MI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where T_N\'eel=T_MI is achieved, the paramagnetic insulating phase characteristic of the bulk compound is suppressed and the MIT becomes 1st order. Further increasing the in-plane compression of the SmNiO_3 lattice leads to the stabilization of a single metallic paramagnetic phase.
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