Transport and Capture Properties of Auger-Generated High-Energy Carriers in (AlInGa)N Quantum Well Structures

TL;DR

This paper investigates how high-energy carriers generated by Auger recombination in (AlInGa)N quantum wells are transported and captured, revealing factors that influence detection efficiency and confirming Auger processes' role in efficiency reduction.

Contribution

It provides a detailed analysis of transport and capture properties of high-energy carriers in (AlInGa)N quantum wells, highlighting the impact of polarization fields, capture distance, and volume on detection.

Findings

Capture probability is affected by polarization fields and capture volume.

Electron-electron-hole Auger recombination exceeds electron-hole-hole at similar carrier densities.

Auger processes significantly contribute to efficiency loss in (AlInGa)N LEDs.

Abstract

Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa)N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the capture probability of these hot electrons and holes in a detection well and the asymmetry in type of Auger recombination. We investigate the transport and capture properties of these high-energy carriers regarding polarization fields, the capture distance to the generating well and the capture volume. All three factors are shown to have a noticeable impact on the detection of these hot particles. Furthermore, the investigations support the finding that electron-electron-hole exceeds electron-hole-hole Auger recombination if the densities of both carrier types are similar. Overall, the results add to the evidence that Auger processes play an important role in the reduction of efficiency in (AlInGa)N based LEDs.