Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach

TL;DR

This paper investigates how energy deposition fluctuations at the nanoscale can lead to multiple cell upsets in advanced memory devices, highlighting the importance of microdosimetric analysis.

Contribution

It introduces a microdosimetric approach to quantify the uncertainty in multiple cell upset cross-sections in nanoscale memories.

Findings

Energy deposition fluctuations cause multiplicity scatters in cell upsets.

Nanoscale feature sizes (<100 nm) are significantly affected by these fluctuations.

Microdosimetric methods can improve understanding of upset mechanisms.

Abstract

We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets in the nanoscale (with feature sizes less than 100 nm) memories.