Dipole-Allowed Direct Band Gap Silicon Superlattices

TL;DR

This paper introduces stable silicon superlattices with direct band gaps suitable for optoelectronic applications, achieved by intercalating defective layers into silicon's diamond lattice, enabling potential silicon-based optoelectronic devices.

Contribution

The study discovers and characterizes silicon superlattices with direct band gaps, providing a new pathway for silicon optoelectronics through defect engineering and zone folding effects.

Findings

Superlattices exhibit dipole-allowed direct band gaps.

Structural stability confirmed via molecular dynamics simulations.

Proposed synthesis method via wafer bonding.

Abstract

Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic devices. The structures are almost identical to that of bulk Si except that defective layers are intercalated in the diamond lattice. The superlattices exhibit dipole-allowed direct band gaps as well as indirect band gaps, providing ideal conditions for the investigation of a direct-to-indirect band gap transition. The transition can be understood in terms of a novel conduction band originating from defective layers, an overlap between the valence- and conduction-band edge states at the interface layers, and zone folding with quantum confinement effects on the conduction band of non-defective bulk-like Si. The fact that almost all structural portions of the superlattices originate from bulk Si warrants their stability and good lattice matching with bulk Si. Through first-principles molecular dynamics simulations, we confirmed their thermal stability and propose a possible method to synthesize the defective layer through wafer bonding.