Coupling ferroelectricity with spin-valley physics in oxide-based heterostructure
Kunihiko Yamauchi, Paolo Barone, Tatsuya Shishidou, Tamio Oguchi, and, Silvia Picozzi

TL;DR
This paper explores how ferroelectricity in oxide heterostructures can be used to control spin-valley physics, enabling potential advancements in spintronic and valleytronic devices through non-volatile switching.
Contribution
It demonstrates the coupling of ferroelectricity with spin-valley physics in BiAlO3/BiIrO3 heterostructures, showing how ferroelectric polarization can manipulate valley-contrasting spin polarization.
Findings
Strong spin-valley coupling mediated by crystal field and spin-orbit effects
Ferroelectricity enables non-volatile control of spin polarization
Potential for novel spintronic and valleytronic device applications
Abstract
The coupling of spin and valley physics is nowadays regarded as a promising route toward next-generation spintronic and valleytronic devices. In the aim of engineering functional properties for valleytronic applications, we focus on the ferroelectric heterostructure BiAlO3/BiIrO3, where the complex interplay among trigonal crystal field, layer degrees of freedom and spin-orbit coupling mediates a strong spin-valley coupling. Furthermore, we show that ferroelectricity provides a non-volatile handle to manipulate and switch the emerging valley-contrasting spin polarization.
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