Electron mobility in few-layer MoxW1-xS2

TL;DR

This study theoretically analyzes electron mobility in few-layer MoxW1-xS2, identifying dominant scattering mechanisms and their dependence on electron density and alloy composition, to inform device design.

Contribution

It provides a detailed theoretical analysis of scattering mechanisms affecting electron mobility in MoxW1-xS2, highlighting the roles of LO phonon, impurity, and alloy scattering.

Findings

Impurity scattering limits mobility at low carrier densities.

LO phonon scattering dominates at high electron densities.

Alloy scattering is significant for 0.5 < x < 0.7.

Abstract

In this letter, we theoretically study the electron mobility in few-layer MoxW1-xS2 as limited by various scattering mechanisms. The room temperature energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon, alloy and background impurity scattering mechanisms are estimated based on the Born approximation to Fermi's Golden rule. The contribution of individual scattering rates is analyzed as a function of 2D electron density as well as of alloy composition in MoxW1-xS2. While impurity scattering limits the mobility for low carrier density (<2x1012 cm-2), LO polar phonon scattering is the dominant mechanism for high electron densities. Alloy scattering is found to play a non-negligible role for 0.5 < x < 0.7 in MoxW1-xS2. The LO phonon limited and impurity limited mobilities show opposing trends with respect to alloy mole fraction. The understanding of electron mobility in MoxW1-xS2 presented here is expected to aid the design and realization of hetero-structures and devices based on alloys of MoS2 and WS2.