Scaling Theory of Electrically Doped 2D Transistors

TL;DR

This paper develops a new scaling theory for electrically doped 2D transistors, showing that traditional models for chemically doped devices do not apply, and identifies key design parameters for optimization.

Contribution

A novel scaling theory for electrically doped 2D transistors is proposed, based on analytic solutions of the 2D Poisson equation, validated by quantum transport simulations.

Findings

Optimal devices have minimal gate spacing and thinnest oxide layers.

Traditional EOT-based scaling theories are not applicable to electrically doped 2D transistors.

Physical oxide thickness and inter-gate distance are the critical design parameters.

Abstract

In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the concept of equivalent oxide thickness (EOT) is not applicable anymore. Hence, a novel scaling theory is developed based on analytic solutions of the 2D Poisson equation. Full band atomistic quantum transport simulations verify the theory and show that the critical design parameters are the physical oxide thickness and distance between the gates. Accordingly, the most optimized electrically doped devices are those with the smallest spacing between the gates and the thinnest oxide, and not the smallest EOT.