Vertical transport in InAs/GaSb superlattice: role of ionized impurity and interface roughness scatterings

TL;DR

This paper investigates how ionized impurity and interface roughness scatterings affect vertical electron mobility in InAs/GaSb superlattices, using theoretical modeling to analyze the impact of structural parameters across temperatures.

Contribution

It introduces a detailed theoretical analysis of scattering mechanisms influencing vertical mobility in InAs/GaSb superlattices, considering various structural parameters.

Findings

Ionized impurity and interface roughness scatterings dominate at low temperatures.

Vertical mobility decreases with increased interface roughness and ion density.

Structural parameters significantly influence electron transport properties.

Abstract

We report on the vertical electron mobility versus temperature by applying the interface roughness scattering and ionized impurity scattering in InAs/GaSb superlattices. Using the Finite difference K.P method, we calculated the band structure of InAs/Gasb superlattices and then studied the transport properties of these systems. Several structural parameters such as layer thicknesses, interface roughness height, correlation length and ion density have been investigated and characterized that how the vertical mobility change with varying these parameters. Theoretical modeling results show that these two scattering mechanism are important in lower temperatures and thin layer systems.