Electronic and magnetic properties of off-stoichiometric Co$_\mathrm{2}$Mn$_{\beta}$Si/MgO interfaces studied by x-ray magnetic circular dichroism
V. R. Singh, V. K. Verma, K. Ishigami, G. Shibata, A. Fujimori, T., Koide, Y. Miura, M. Shirai, T. Ishikawa, G. f. Li, and M. Yamamoto

TL;DR
This study investigates how off-stoichiometry in Co2MnβSi/MgO interfaces affects electronic and magnetic properties, revealing that Mn and Co magnetic moments decrease with increased Mn content, aligning with first-principles calculations and TMR ratio observations.
Contribution
The paper provides a detailed analysis of the Mn composition dependence of magnetic moments at CMS/MgO interfaces using XMCD and first-principles modeling, highlighting the role of antisite defects.
Findings
Mn and Co magnetic moments decrease with increasing Mn composition
Antisite defect concentration decreases with higher Mn content, improving half-metallicity
Higher TMR ratios observed for Mn-rich CMS electrodes
Abstract
We have studied the electronic and magnetic states of Co and Mn atoms at the interface of the CoMnSi (CMS)/MgO (=0.69, 0.99, 1.15 and 1.29) magnetic tunnel junction (MTJ) by means of x-ray magnetic circular dichroism. In particular, the Mn composition () dependences of the Mn and Co magnetic moments were investigated. The experimental spin magnetic moments of Mn, (Mn), derived from XMCD weakly decreased with increasing Mn composition in going from Mn-deficient to Mn-rich CMS films. This behavior was explained by first-principles calculations based on the antisite-based site-specific formula unit (SSFU) composition model, which assumes the formation of only antisite defect, not vacancies, to accommodate off-stoichiometry. Furthermore, the experimental spin magnetic moments of Co, (Co), also weakly decreased…
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