Observation of quantum transport features in graphene devices fabricated utilizing a nano-manipulating probe technique

TL;DR

This paper introduces a rapid fabrication method for multilayer graphene devices using nanoprobes, revealing quantum transport features through magnetoresistance measurements and analyzing their electronic properties.

Contribution

A novel nano-manipulating probe technique for fast fabrication of multilayer graphene devices and detailed analysis of their quantum transport properties.

Findings

Pronounced Shubnikov-de Haas oscillations observed at high magnetic fields and low temperatures.

Carrier density and effective mass similar to bilayer and trilayer graphene.

Quantum lifetime indicating disorder broadening of 5 to 15 meV.

Abstract

A novel method for fast fabrication of mesoscopic multilayered graphene electronic devices utilizing nanoprobes to exfoliate graphite flakes is developed. The magnetoresistance of these devices exhibit pronounced Shubnikov-de Haas oscillations at magnetic fields above 4 T and at temperatures below 30 K. From the analysis of the SdH oscillations we show that multilayer graphene devices have a carrier density and effective mass (m*= 0.042me - 0.083me) comparable to those of bilayer and trilayer graphene. The quantum lifetime in this multilayered graphene is in the range 22 to 90 fs corresponding to a disorder-broadening of 5 to 15 meV.