Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

TL;DR

This paper presents a scalable chemical vapor deposition method to produce high-quality Cd3As2 microbelts with ultrahigh mobility and quantum oscillations, advancing the fabrication of 3D Dirac semimetals for electronic applications.

Contribution

A new scalable synthesis technique for high-mobility Cd3As2 microbelts, enabling practical use of 3D Dirac semimetals in electronics.

Findings

Ultrahigh mobility up to 1.15×10^5 cm^2/V s

Pronounced Shubnikov-de Haas oscillations

Suppression of electron backscattering

Abstract

Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were subsequently demonstrated by photoemission experiments. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5 cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials towards exciting electronic applications of 3D Dirac semimetals.