Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

TL;DR

This paper presents measurements and TCAD simulations of new ATLAS pixel detector structures designed for the HL-LHC upgrade, focusing on characterisation, doping profiles, and validation methods to enhance detector performance.

Contribution

It introduces a novel approach combining measurements and TCAD simulations to optimise pixel detector designs for HL-LHC conditions.

Findings

Validated TCAD simulations with SIMS measurements of doping profiles

Developed a method for studying non-perpendicular tracks in pixel devices

Enhanced understanding of pixel structure performance under HL-LHC conditions

Abstract

The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses. To operate under these challenging new conditions, and maintain excellent performance in track reconstruction and vertex location, the ATLAS pixel detector must be substantially upgraded and a full replacement is expected. Processing techniques for novel pixel designs are optimised through characterisation of test structures in a clean room and also through simulations with Technology Computer Aided Design (TCAD). A method to study non-perpendicular tracks through a pixel device is discussed. Comparison of TCAD simulations with Secondary Ion Mass Spectrometry (SIMS) measurements to investigate the doping profile of structures and validate the simulation process is also presented.