Effects of disorder on carrier transport in Cu$_2$SnS$_3$
Lauryn L. Baranowski, Kevin McLaughlin, Pawel Zawadzki, Stephan Lany,, Andrew Norman, Hannes Hempel, Rainer Eichberger, Thomas Unold, Eric S., Toberer, Andriy Zakutayev

TL;DR
This study investigates how cation disorder affects carrier transport in Cu$_2$SnS$_3$, revealing that even ordered samples exhibit disordered transport properties due to defects, impacting photovoltaic performance.
Contribution
The paper develops techniques to control disorder in Cu$_2$SnS$_3$ and combines experimental and theoretical methods to analyze its effects on carrier transport.
Findings
Disorder influences majority carrier (hole) transport.
Minority carrier (electron) transport remains similar regardless of disorder.
Extended planar defects are present even in ordered samples.
Abstract
In recent years, further improvements in the efficiency of CuZnSn(S,Se) photovoltaic devices have been hampered due to several materials issues, including cation disorder. CuSnS is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, CuSnS displays cation disorder. In this work, we develop synthetic techniques to control the disorder in CuSnS thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered CuSnS. By combining these results with first-principles and Monte Carlo theoretical calculations,…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces
