Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors
M. F. Gonzalez-Zalba, C. Ciccarelli, L. P. Zarbo, A. C. Irvine, R. P., Campion, B. L. Gallagher, T. Jungwirth, A. J. Ferguson, J. Wunderlich

TL;DR
This paper introduces a magnetic single-electron transistor (MSET) that can be reprogrammed to perform various low-power logic functions by reorienting its magnetic layer, enabling flexible and energy-efficient digital logic operations.
Contribution
The paper presents a novel hybrid magnetic single-electron transistor capable of reprogramming logic functions through magnetic orientation control, advancing low-power reconfigurable logic device technology.
Findings
Reprogrammable Boolean gates demonstrated at the single device level
Device function changes with magnetic orientation of the GaMnAs layer
Proposed binary gates using two MSETs in a pull-down network
Abstract
We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.
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Taxonomy
TopicsQuantum and electron transport phenomena · Magnetic properties of thin films · Physics of Superconductivity and Magnetism
