Non-equilibrium AC Stark effect and long-lived exciton-polariton states in semiconductor Mie resonators

TL;DR

This paper investigates the non-equilibrium AC Stark effect in semiconductor Mie resonators using advanced Floquet-Keldysh DMFT calculations, revealing long-lived exciton-polariton states that could enable stable lasing.

Contribution

It introduces a novel non-equilibrium dynamical mean field approach to study Stark states and exciton-polariton coupling in semiconductor resonators under high pump power.

Findings

Prediction of gap closing in semiconductor bulk and nano-cavities.

Observation of band broadening in ZnO random lasers.

Enhanced lifetime of electronic states leading to potential stable lasing modes.

Abstract

We present Floquet-Keldysh non-equilibrium dynamical mean field calculations (DMFT) with an iterative perturbative solver (IPT) for high pump-power induced Stark states yielding a closing gap within semiconductor bulk and nano-cavities. Our model predicts unusual broadening of bands in systems like ZnO random lasers. This can be explained as an exciton-polariton coupling within the single crystalline pillar meeting the Mie resonance condition. Extraordinary enhancement of the lifetime of electronic states within the gap can lead to stable lasing modes and gain narrowing.