Current dependence of the huge negative magnetoresistance in high-mobility two-dimensional electron gases
L. Bockhorn, J. Inarrea, R. J. Haug

TL;DR
This paper investigates the negative magnetoresistance in high-mobility two-dimensional electron gases, revealing its dependence on magnetic field, current, and carrier concentration, explained by elastic scattering interactions within and between Landau levels.
Contribution
It provides a detailed analysis of the current dependence of negative magnetoresistance, highlighting the role of elastic scattering in high-mobility 2DEGs at low magnetic fields.
Findings
Negative magnetoresistance is significant at low magnetic fields.
Non-linear behavior of magnetoresistance depends on carrier concentration.
Elastic scattering within and between Landau levels explains the observed phenomena.
Abstract
In high-mobility two-dimensional electron gases Landau levels are already formed at very small magnetic field values. Such two-dimensional electron gases show a huge negative magnetoresistance at low temperatures and an unexpected and very strong non-linear behavior with the applied current. This non-linearity depends on carrier concentration and is explained by the subtle interplay of elastic scattering within Landau levels and in between Landau levels.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsQuantum and electron transport phenomena · Electronic and Structural Properties of Oxides · Semiconductor Quantum Structures and Devices
