Thermal Runaway, Flash Sintering and Asymmetrical Microstructural Development of ZnO and ZnO-Bi2O3 under Direct Currents
Yuanyao Zhang, Jae-Il Jung, Jian Luo

TL;DR
This study investigates the mechanisms of flash sintering and microstructural development in ZnO and ZnO-Bi2O3 under direct currents, developing a predictive model for thermal runaway and revealing electric-potential-induced grain growth phenomena.
Contribution
It introduces a model to predict thermal runaway conditions in ZnO-based systems and explains the microstructural changes during flash sintering under electric currents.
Findings
Flash sintering occurs at lower temperatures in powders than in single crystals.
Bi2O3 doping delays flash onset and promotes microstructure homogenization.
Electric potential induces abnormal grain growth and aligned single-crystalline rods.
Abstract
DC flash sintering of both pure and 0.5 mol. % Bi2O3-doped ZnO at a relatively high activating field of 300 V/cm has been investigated. It is demonstrated that even high-purity ZnO single crystals can "flash" at 870C. In comparison, flash sintering occurs at a substantially lower onset temperature of 550C in ZnO powder specimens, indicating the important roles of surfaces and/or grain boundaries. A model has been developed to forecast the thermal runaway conditions and the predictions are in excellent agreements with the observed onset flash temperatures, attesting that the flash starts as a thermal runaway in at least these ZnO based systems. Interestingly, enhanced grain growth is observed at the anode side of the pure ZnO specimens with an abrupt change in the grain sizes, indicating the occurrence of electric-potential-induced abnormal grain growth. With a large current density, the…
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Taxonomy
TopicsZnO doping and properties · Electronic and Structural Properties of Oxides · Advancements in Solid Oxide Fuel Cells
