Sudden gap-closure across the topological phase transition in Bi$_{2-x}$In$_{x}$Se$_{3}$
Rui Lou, Zhonghao Liu, Wencan Jin, Haifeng Wang, Zhiqing Han, Kai Liu,, Xueyun Wang, Tian Qian, Yevhen Kushnirenko, Sang-Wook Cheong, Richard M., Osgood, Jr., Hong Ding, Shancai Wang

TL;DR
This study investigates the topological phase transition in Bi$_{2-x}$In$_{x}$Se$_{3}$, revealing a sudden gap-closure and disappearance of surface states around a specific doping level, driven by spin-orbit coupling and band hybridization.
Contribution
It provides detailed experimental evidence of the complete evolution of bulk and surface states during the topological phase transition induced by non-magnetic doping.
Findings
Surface states remain robust up to x=0.175
Bulk gap closes suddenly around x=0.175-0.225
Transition driven by spin-orbit coupling and band hybridization
Abstract
The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on BiInSe single crystals. We first report the complete evolution of the bulk band structures throughout the transition. The robust surface state and the bulk gap size ( 0.50 eV) show no significant change upon doping for = 0.05, 0.10 and 0.175. At 0.225, the surface state completely disappears and the bulk gap size increases, suggesting a sudden gap-closure and topological phase transition around 0.1750.225. We discuss the underlying mechanism of the phase transition, proposing that it is governed by the combined effect of spin-orbit coupling and interactions upon band hybridization. Our study provides a new venue to investigate the mechanism of the topological phase transition induced by non-magnetic…
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