TiS3 transistors with tailored morphology and electrical properties

TL;DR

This paper demonstrates the synthesis of TiS3 nanoribbons and nanosheets with controlled morphology, revealing how structural differences influence electronic properties, including doping effects due to sulphur vacancies, supported by experimental and theoretical analysis.

Contribution

It introduces a method to control TiS3 morphology and provides detailed characterization of how morphology affects electronic properties, including defect-induced doping.

Findings

Nanosheets can be exfoliated to a single layer.

Nanosheets exhibit higher sulphur vacancy density.

Sulphur vacancies lead to n-type doping in nanosheets.

Abstract

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type doping.