Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures

TL;DR

This paper reports the synthesis of atomically thin van der Waals heterostructures that exhibit resonant tunneling and negative differential resistance at room temperature, opening new avenues for ultra-thin electronic devices.

Contribution

It demonstrates the direct synthesis of multi-junction heterostructures combining graphene with transition-metal dichalcogenides, enabling resonant tunneling in atomically thin stacks.

Findings

Resonant tunneling observed in atomically thin heterostructures.

Spectrally narrow negative differential resistance at room temperature.

Successful synthesis of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene stacks.

Abstract

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics.