DC thermal modeling of CNTFETs based on a semi-empirical approach

TL;DR

This paper introduces a semi-empirical DC thermal model for CNTFETs that accurately predicts device behavior across various thermal conditions with low computational cost, suitable for CAD integration.

Contribution

It presents a novel thermal modeling approach for CNTFETs using polynomial fitting parameters, validated against diverse thermal scenarios.

Findings

Model accurately predicts I-V characteristics under different thermal conditions.

Simulation results match well with existing models.

Low CPU time enables practical CAD application.

Abstract

A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal parameters describing CNTFET behaviour in terms of saturation drain current, threshold voltage and M exponent in the knee region versus the temperature. To confirm the validity of the proposed thermal model, the simulations were performed in very different thermal conditions, obtaining I-V characteristics perfectly coincident with those of other models. The very low CPU calculation time makes the proposed model particularly suitable to be implemented in CAD applications.