Electrical excitation of silicon-vacancy centers in single crystal diamond

TL;DR

This paper demonstrates electrically driven emission from silicon-vacancy centers in single crystal diamond, showing potential for scalable diamond-based nanophotonics devices.

Contribution

It presents the first successful electrical excitation of SiV centers in single crystal diamond using ion implantation in a p-i-n diode structure.

Findings

Electroluminescence from SiV centers was achieved.

No neutral (SiV)0 signals observed under bias.

Electrically driven SiV emission is promising for nanophotonics.

Abstract

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.