A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime-Part I Intrinsic Elements

TL;DR

This paper introduces a data-calibrated compact model for CNT FETs that accurately describes their intrinsic electrical behavior at sub-10-nm scales, incorporating effects like short channel phenomena and quantum capacitance.

Contribution

It presents a novel virtual-source based compact model for CNFETs that includes scaling effects, quantum capacitance, and device-specific parameters, suitable for sub-10-nm technology analysis.

Findings

Model accurately predicts short channel effects.

Incorporates CNT diameter-dependent mobility and velocity.

Captures quantum capacitance effects at high gate bias.

Abstract

We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of the model include: (i) carrier VS velocity extracted from experimental devices with gate lengths down to 15 nm; (ii) carrier effective mobility and velocity depending on the CNT diameter; (iii) short channel effect such as inverse subthreshold slope degradation and drain-induced barrier lowering depending on the device dimensions; (iv) small-signal capacitances including the CNT quantum capacitance effect to account for the decreasing gate capacitance at high gate bias. The CNFET model captures dimensional scaling effects and is suitable for technology benchmarking and performance projection at the sub-10-nm technology nodes.