Suspended graphene devices with local gate control on an insulating substrate

TL;DR

This paper introduces a fabrication process for suspended graphene devices with local gate control on insulating substrates, enabling advanced experiments in quantum and nano-electromechanical systems.

Contribution

The paper presents a novel fabrication method for suspended graphene devices with local gating on insulating substrates, applicable to various two-dimensional materials.

Findings

Field-effect modulation observed at 77 K and below.

Fabrication enables new experiments with graphene-based superconducting qubits.

Method applicable to other 2D materials.

Abstract

We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77~K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials.