Role of substrate temperature at graphene synthesis in arc discharge

TL;DR

This study investigates how substrate temperature affects graphene synthesis in arc discharge, revealing optimal temperature ranges that enhance graphene quality and production efficiency.

Contribution

It identifies the specific substrate temperature range (1210-1340 K) that optimizes graphene synthesis in arc discharge plasma.

Findings

Higher substrate temperatures increase graphene yield and quality.

Optimal temperature range for synthesis is approximately 1210-1340 K.

Melting point of copper is a critical factor in synthesis efficiency.

Abstract

The substrate temperature required for synthesis of graphene in an arc discharge plasma was studied. It was shown that an increase of copper substrate temperature up to the melting point leads to an increase in the amount of graphene production and the quality of graphene sheets. Favorable range of substrate temperatures for arc-based graphene synthesis was determined, and it is in a relatively narrow range of about 1210-1340 K.